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Catalog << Electronics & Electrical << Electronic Component << Electronic Component. Page 13 << D882S Power Transistor Wafer

D882S Power Transistor Wafer

D882S Power Transistor Wafer

Detailed D882S Power Transistor Wafer Description

B772 / D882 silicon PNP / NPN wafer

Specifications: 
a) Size: 1.13mm x 1.13mm
b) PC: 10W
c) IC: 3A
d) BVCEO: ≥30V
e) BVCBO: ≥40V
f) BVEBO: ≥6V
g) VCES: ≤0.6V

Our D882S Power Transistor Wafer comply with International Quality Standards and their quality and durability are fully guranteed.

Contact information:

Inquire
Address: 269 Taiping Road, Yangzhou City, Jiangsu Province. China
Company Name: Yangzhou Genesis Microelectronics Co., Ltd.
Contact Person: Miss.Qiu Jufen
Fax: 86-514-7953250
Telephone: 86-514-7953520
Website: http://www.jingxin-yz.com
Zip: 225003

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