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Catalog << Electronics & Electrical << Electronic Component << Electronic Component. Page 13 << GS023 Schottky Diode Wafer

GS023 Schottky Diode Wafer Detailed GS023 Schottky Diode Wafer Description Specifications: a) Size: 0.35mm x 0.35mm b) P: 200mW c) Io: 200mA d) VR: ≥30V e) VF: ≤1V f) IR: 2uA We are committed to doing our best for you, and welcome inquiries for GS023 Schottky Diode Wafer. Contact information: Inquire Address: 269 Taiping Road, Yangzhou City, Jiangsu Province. China Company Name: Yangzhou Genesis Microelectronics Co., Ltd. Contact Person: Miss.Qiu Jufen Fax: 86-514-7953250 Telephone: 86-514-7953520 Website: http://www.jingxin-yz.com Zip: 225003 Similar Products Thyristor Modules MTC200A 1N4148 Trimming Potentiometers Heat Shrinkable Outdoor Insulation Tube 1N4148 / 1SS187 Wafer(4 ) Rotary Potentiometer Washing Machine Thermostat RCA / DIN - 2101